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Comparative study of GaAs‐based 1.5 micron‐range InAs/InGaAs and InAs/InAlAs self‐assembled quantum dots
Author(s) -
Gladyshev A. G.,
Kryzhanovskaya N. V.,
Nadtochy A. M.,
Semenova E. S.,
Zhukov A. E.,
Vasil'ev A. P.,
Mikhrin V. S.,
Musikhin Yu. G.,
Maximov M. V.,
Ledentsov N. N.,
Ustinov V. M.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200566178
Subject(s) - wetting layer , quantum dot , materials science , optoelectronics , gallium arsenide , photoluminescence , layer (electronics) , nanotechnology
Optical properties of self‐organized QDs grown on thick metamorphic InGaAs layers with different In composition are studied. The dots are formed by an overgrowth of original InAs islands with thin InGaAs or InAlAs layers. Room temperature photoluminescence at 1.55 µm is demonstrated for the sample with 27% In composition in the matrix. The overgrowth with InAlAs layers permits to eliminate the wetting layer states and increase energy separation between QD ground and excited states. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)