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Electric force microscopy of individually charged semiconductor nanoparticles
Author(s) -
Diesinger H.,
Mélin T.,
Barbet S.,
Deresmes D.,
Stiévenard D.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200566162
Subject(s) - hysteresis , semiconductor , quantum dot , silicon , nanoparticle , materials science , charge (physics) , electric charge , nanotechnology , photoconductive atomic force microscopy , microscopy , condensed matter physics , optoelectronics , chemical physics , analytical chemistry (journal) , chemistry , scanning electron microscope , optics , physics , composite material , scanning capacitance microscopy , scanning confocal electron microscopy , quantum mechanics , chromatography
Charge injection experiments by electrostatic force microscopy are performed on single semiconductor nanoparticles. Different methods of detecting the stored charge are used. Although the amount of charge stored in particles of realistic shape can be determined quantitatively, we present here a qualitative comparison between Q ( V ) hysteresis curves observed on silicon and GaN quantum dots, in dry nitrogen and in ultra high vacuum. For silicon dots in dry atmosphere, we find a hysteresis behavior entirely different from the one observed on GaN dots in ultra high vacuum. The contribution of interface states to hysteresis is discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)