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Error analysis of boundary condition approximations in the modeling of coaxially‐gated carbon nanotube field‐effect transistors
Author(s) -
McGuire Dylan L.,
Pulfrey David L.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200566122
Subject(s) - carbon nanotube field effect transistor , carbon nanotube , nanotube , boundary value problem , field effect transistor , boundary (topology) , transistor , field (mathematics) , materials science , space (punctuation) , nanotechnology , computational physics , computer science , physics , mathematics , engineering , electrical engineering , mathematical analysis , voltage , pure mathematics , operating system
In the modeling of carbon nanotube field‐effect transistors, non‐physical boundary conditions are often employed at the borders of the simulation space. This paper investigates the consequences of imposing these boundary conditions on common geometries, and proposes solutions which reduce the error without compromising simulation efficiency. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)