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Transport properties of the two‐dimensional electron gas in GaN/AlGaN heterostructures grown by ammonia molecular‐beam epitaxy
Author(s) -
Pogosov A. G.,
Budantsev M. V.,
Lavrov R. A.,
Mansurov V. G.,
Nikitin A. Yu.,
Preobrazhenskii V. V.,
Zhuravlev K. S.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200566024
Subject(s) - molecular beam epitaxy , heterojunction , magnetoresistance , condensed matter physics , fermi gas , chemistry , epitaxy , ammonia , quantum well , electron , phase (matter) , gas phase , materials science , magnetic field , physics , nanotechnology , optics , quantum mechanics , laser , organic chemistry , layer (electronics)
Transport properties of the two‐dimensional electron gas in AlGaN/GaN heterostructures grown by ammonia molecular‐beam epitaxy are experimentally investigated. Conventional Hall and Shubnikov–de Haas measurements as well as investigations of quantum transport phenomena are reported. It is found that negative magnetoresistance (NMR) caused by weak localization demonstrates an unusual behavior at low temperature (1.8 K). The observed NMR cannot be described by the ordinary theory of quantum corrections to conductivity based on a single phase breaking time τ ϕ . The anomalous NMR behavior can be explained by the presence of two occupied quantum subbands, characterized by their own phase breaking times τ ϕ 1 and τ ϕ 2 . (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)