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Mixed partial dislocation core structure in GaN by high resolution electron microscopy
Author(s) -
Kioseoglou J.,
Dimitrakopulos G. P.,
Komninou Ph.,
Kehagias Th.,
Karakostas Th.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200566019
Subject(s) - high resolution transmission electron microscopy , wurtzite crystal structure , dislocation , transmission electron microscopy , partial dislocations , core (optical fiber) , materials science , resolution (logic) , atom (system on chip) , electron microscope , electron , molecular physics , crystallography , chemistry , nanotechnology , physics , optics , composite material , computer science , artificial intelligence , hexagonal crystal system , embedded system , quantum mechanics
The core structures of a 1/6 [2 $\bar 2$ 03] mixed partial dislocation in wurtzite GaN have been investigated using a combination of high resolution transmission electron microscopy, circuit mapping, and image simulation of relaxed models. HRTEM simulated images of relaxed atomic models, derived by energetic calculations with a modified Stillinger–Weber‐type empirical interatomic potential, were calculated and compared to the experimental images. Among twenty‐four stable core configurations the 12‐ and 10‐atom rings satisfied the experimental contrast. A pattern registration procedure was used for the matching of simulated and experimental HRTEM images. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)