Properties of the CdTe/InSb interface studied by optical and surface analytical techniques | Zendy

Feng Z. C. | Zendy; Hung S. Y. | Zendy; Wee A. T. S. | Zendy

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Properties of the CdTe/InSb interface studied by optical and surface analytical techniques

Author(s) -

Feng Z. C.,

Hung S. Y.,

Wee A. T. S.

Publication year - 2006

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200566013

Subject(s) - x ray photoelectron spectroscopy , cadmium telluride photovoltaics , heterojunction , indium , photoluminescence , secondary ion mass spectrometry , secondary ion mass spectroscopy , analytical chemistry (journal) , materials science , chemistry , optoelectronics , mass spectrometry , physics , nuclear magnetic resonance , environmental chemistry , chromatography , silicon

Indium interdiffusion in MBE‐grown CdTe/InSb heterostructures was studied by optical and surface techniques of photoluminescence (PL), X‐ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). A correlation between the two types of investigations is established. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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