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Properties of the CdTe/InSb interface studied by optical and surface analytical techniques
Author(s) -
Feng Z. C.,
Hung S. Y.,
Wee A. T. S.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200566013
Subject(s) - x ray photoelectron spectroscopy , cadmium telluride photovoltaics , heterojunction , indium , photoluminescence , secondary ion mass spectrometry , secondary ion mass spectroscopy , analytical chemistry (journal) , materials science , chemistry , optoelectronics , mass spectrometry , physics , nuclear magnetic resonance , environmental chemistry , chromatography , silicon
Indium interdiffusion in MBE‐grown CdTe/InSb heterostructures was studied by optical and surface techniques of photoluminescence (PL), X‐ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). A correlation between the two types of investigations is established. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)