Si‐oxide/Si and Si‐oxynitride/Si interfaces analysed by ultra‐low energy SIMS

Depth profile analyses of silicon oxides and oxynitrides are compared using SIMS (Secondary Ion Mass Spectrometry) technique with ultra low energy of primary Ar + ion beam. SiO 2 (5–80 nm thick) layers on p‐Si 〈100〉 were formed by thermal heating of silicon wafers in oxygen flow. SiO x N y (2–4 nm thick) layers on p‐Si 〈100〉 were obtained by nitrogen implantation followed by plasma oxidation process. The nitrogen implantation was performed with NH 3 and N 2 plasma sources in 350 °C. The influence of r.f. power, used during implantation on the oxynitride layer properties, was studied. SIMS measurements were done using ultra‐low energy 880 eV Ar + beam and quadrupole mass spectrometer. Quantitative atomic concentrations of nitrogen and oxygen were calculated basing on Si 2 N + , Si 2 O + and Si 2 + secondary ion currents. The obtained layers were also characterised by X‐ray Photoelectron Spectroscopy, ellipsometry and electrical tests. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)