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Influence of enhanced temperature and pressure on structural transformations in pre‐annealed Cz‐Si
Author(s) -
Ciosek Jerzy,
Misiuk Andrzej,
Surma Barbara,
Shchennikov Vladimir V.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200566008
Subject(s) - annealing (glass) , photoluminescence , nucleation , microstructure , hydrostatic pressure , indentation hardness , oxygen , materials science , silicon , oxygen pressure , precipitation , analytical chemistry (journal) , crystallography , metallurgy , mineralogy , chemistry , optoelectronics , thermodynamics , meteorology , physics , organic chemistry , chromatography
Oxygen‐related defects in oxygen‐containing Czochralski silicon (Cz‐Si) subjected to one or 4‐steps pre‐annealing at 720–1000 K under 10 5 Pa and next treated at 1170–1400 K (HT) under high hydrostatic pressure (HP, up to 1.2 GPa) were investigated by photoluminescence (PL) and microhardness measurements as well as by spectroscopic reflectrometry. Microstructure of HT‐HP treated Cz‐Si is dependent on nucleation centres for oxygen precipitation created by pre‐annealing and on applied pressure. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)