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N‐type doping of HVPE‐grown GaN using dichlorosilane
Author(s) -
Richter E.,
Hennig Ch.,
Zeimer U.,
Wang L.,
Weyers M.,
Tränkle G.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565420
Subject(s) - dichlorosilane , doping , silane , materials science , epitaxy , silicon , hydride , optoelectronics , chemistry , analytical chemistry (journal) , nanotechnology , metallurgy , layer (electronics) , organic chemistry , composite material , metal
N‐type doping of GaN in hydride vapour phase epitaxy (HVPE) has been studied. While silane was found to be not suitable, doping from solid silicon was found to be feasible but difficult to handle. Dichlorosilane was found to be a convenient Si doping source for HVPE growth of GaN. High electron mobilities as well as good optical and structural properties are obtained in the doping range of 6 × 10 17 cm –3 to 8 × 10 18 cm –3 using dichlorosilane. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)