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InN growth on sapphire using different nitridation procedures
Author(s) -
Drago M.,
Werner C.,
Pristovsek M.,
Pohl U. W.,
Richter W.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565414
Subject(s) - sapphire , materials science , nitriding , layer (electronics) , epitaxy , diffusion , in situ , nitrogen , metal , optoelectronics , analytical chemistry (journal) , metalorganic vapour phase epitaxy , ellipsometry , nanotechnology , chemistry , metallurgy , thin film , optics , laser , thermodynamics , environmental chemistry , physics , organic chemistry
We studied optimal sapphire nitridation conditions with ammonia for the metal‐organic vapor phase epitaxy of InN using in‐situ spectroscopic ellipsometry (SE). SE indicates the formation of a complete AlN‐containing layer on top of the sapphire surface during the first 45 s of nitridation. Further nitridation leads to a growth of the AlN‐like layer by nitrogen diffusion and to roughening. Successively, a set of high quality InN films were grown onto sapphire substrates after different nitridation duration. Electronic characterisation clearly indicates optimum InN quality for 45 s of sapphire nitridation, i.e. when only the sapphire surface is nitridated, as determined by in‐situ SE. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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