Microstructure of thick AlN grown on sapphire by high‐temperature MOVPE | Zendy

Imura M. | Zendy; Nakano K. | Zendy; Kitano T. | Zendy; Fujimoto N. | Zendy; Okada N. | Zendy; Balakrishnan K. | Zendy; Iwaya M. | Zendy; Kamiyama S. | Zendy; Amano H. | Zendy; Akasaki I. | Zendy; Shimono K. | Zendy; Noro T. | Zendy; Takagi T. | Zendy; Bandoh A. | Zendy

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Microstructure of thick AlN grown on sapphire by high‐temperature MOVPE

Author(s) -

Imura M.,

Nakano K.,

Kitano T.,

Fujimoto N.,

Okada N.,

Balakrishnan K.,

Iwaya M.,

Kamiyama S.,

Amano H.,

Akasaki I.,

Shimono K.,

Noro T.,

Takagi T.,

Bandoh A.

Publication year - 2006

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200565401

Subject(s) - metalorganic vapour phase epitaxy , sapphire , materials science , dislocation , epitaxy , microstructure , enhanced data rates for gsm evolution , metal , exciton , crystallography , condensed matter physics , composite material , metallurgy , layer (electronics) , chemistry , optics , laser , telecommunications , physics , computer science

Thick AlN layers with atomically flat surfaces were successfully grown directly on sapphire substrates by metal‐organic vapor phase epitaxy at high temperatures between 1300 °C and 1600 °C. Dislocations such as those of the edge, screw and mixed types exhibited different behaviors in the AlN epilayers. The dislocation density of AlN was less than 2 × 10 9 cm –2 . Free and bound excitons of AlN were observed with peak energies of 6.084 eV and 6.063 eV, respectively. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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