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Microstructure of thick AlN grown on sapphire by high‐temperature MOVPE
Author(s) -
Imura M.,
Nakano K.,
Kitano T.,
Fujimoto N.,
Okada N.,
Balakrishnan K.,
Iwaya M.,
Kamiyama S.,
Amano H.,
Akasaki I.,
Shimono K.,
Noro T.,
Takagi T.,
Bandoh A.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565401
Subject(s) - metalorganic vapour phase epitaxy , sapphire , materials science , dislocation , epitaxy , microstructure , enhanced data rates for gsm evolution , metal , exciton , crystallography , condensed matter physics , composite material , metallurgy , layer (electronics) , chemistry , optics , laser , telecommunications , physics , computer science
Thick AlN layers with atomically flat surfaces were successfully grown directly on sapphire substrates by metal‐organic vapor phase epitaxy at high temperatures between 1300 °C and 1600 °C. Dislocations such as those of the edge, screw and mixed types exhibited different behaviors in the AlN epilayers. The dislocation density of AlN was less than 2 × 10 9 cm –2 . Free and bound excitons of AlN were observed with peak energies of 6.084 eV and 6.063 eV, respectively. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)