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Structural analysis of (Ga,Mn)N epilayers and self‐organized dots using MeV ion channeling
Author(s) -
Kuroda S.,
Marcet S.,
BelletAmalric E.,
Cibert J.,
Mariette H.,
Yamamoto S.,
Sakai T.,
Ohshima T.,
Itoh H.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565396
Subject(s) - wurtzite crystal structure , materials science , crystallography , analytical chemistry (journal) , ion , crystal (programming language) , chemistry , zinc , metallurgy , organic chemistry , chromatography , computer science , programming language
Rutherford backscattering (RBS) and particle‐induced X‐ray emission (PIXE) experiments were performed on (Ga,Mn)N epilayers and self‐organized dots grown by plasma‐assisted MBE. The combined channeling RBS and Mn PIXE experiments were performed on Ga 0.949 Mn 0.051 N epilayer, which was confirmed to be of pure diluted phase by X‐ray diffraction (XRD) in our previous study, in order to check the presence of Mn atoms in the interstitial site in wurtzite crystal. The axis scan around 〈0001〉 and 〈 $ 10 \bar 1 2$ 〉 axes and the plane scan around ( $ 10 \bar 1 0$ ) plane revealed that almost all the Mn atoms were in the substitutional site of wurtzite GaN crystal. For self‐organized dots of (Ga,Mn)N grown on AlN by MBE, the PIXE spectra were measured and the Mn composition in the dot layer was estimated from the ratio of emission intensity of Mn and Ga K α lines. At a result, it was found that the Mn composition in the dots was higher by two or three times than that in thick epilayers grown with the addition of the same amount of Mn flux. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)