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Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates
Author(s) -
Nakano K.,
Imura M.,
Narita G.,
Kitano T.,
Hirose Y.,
Fujimoto N.,
Okada N.,
Kawashima T.,
Iida K.,
Balakrishnan K.,
Tsuda M.,
Iwaya M.,
Kamiyama S.,
Amano H.,
Akasaki I.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565389
Subject(s) - sapphire , epitaxy , materials science , trench , dislocation , substrate (aquarium) , bar (unit) , optoelectronics , nanotechnology , composite material , optics , layer (electronics) , geology , laser , oceanography , physics
Epitaxial lateral overgrowth (ELO) of low‐dislocation‐density AlN layers on trench‐patterned sapphire substrates is demonstrated for the first time. Sapphire (0001) substrates with trench patterns formed along two different directions, 〈10 $ 10 \bar 10 $ 0〉 and 〈11 $ 11 \bar 20 $ 0〉, were used. We can obtain fully coalesced AlN only on the sapphire substrate having 〈11 $ 11 \bar 20 $ 0〉 trenches. The dislocation density of ELO‐AlN is as low as 6.7 × 10 8 cm –2 . (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)