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Crystal quality and growth evolution of aluminum nitride on silicon carbide
Author(s) -
Moe Craig G.,
Wu Yuan,
Keller Stacia,
Speck James S.,
DenBaars Steven P.,
Emerson David
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565388
Subject(s) - materials science , silicon carbide , substrate (aquarium) , gallium nitride , nitride , transmission electron microscopy , metalorganic vapour phase epitaxy , nanotechnology , chemical engineering , carbide , aluminium , layer (electronics) , silicon , metallurgy , epitaxy , oceanography , engineering , geology
High quality base layer aluminum nitride films have become increasingly desirable with the advent of deep ultraviolet (<280 nm) emitters for water purification, solid state lighting, and biochemical detection applications. In this study, the influence of the MOCVD growth conditions on the structural properties of aluminum nitride grown on silicon carbide, both as‐delivered and chemomechanically polished, was studied. Pre‐deposition nitridation of the SiC substrate, growth temperature, growth rate, ammonia flow (V/III ratio), and gallium surfactants were explored. Films were analyzed with transmission electron microscopy (TEM), atomic force microscopy (AFM), and X‐ray diffraction. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)