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Selective‐area growth and fabrication of recessed‐gate GaN MESFET using plasma‐assisted molecular beam epitaxy
Author(s) -
Hong Seung Jae,
Chapman Patrick,
Krein Philip T.,
Kim Kyekyoon Kevin
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565362
Subject(s) - mesfet , transconductance , ohmic contact , molecular beam epitaxy , materials science , optoelectronics , fabrication , etching (microfabrication) , epitaxy , field effect transistor , transistor , nanotechnology , electrical engineering , voltage , layer (electronics) , medicine , alternative medicine , pathology , engineering
For the first time, selective‐area growth (SAG) technique has been developed using plasma‐assisted molecular beam epitaxy (PAMBE), enabling fabrication of a recessed‐gate structure for the metal‐semiconductor field‐effect transistor (MESFET) without etching. On patterned SiO 2 samples, polycrystalline GaN and single crystal n + ‐GaN were observed to grow in the masked and unmasked regions, respectively. The regrown layers were analyzed using AFM. Ohmic contact formed on the n + ‐GaN exhibited a vastly improved contact resistivity of 1.8 × 10 –8 Ω cm 2 , giving rise to excellent device characteristics including a peak drain current of 360 mA/mm and a maximum transconductance of 46 mS/mm. The advantages of SAG were further investigated by comparing the dc characteristics of recessed‐gate and unrecessed MESFET. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)