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Strain and microstructure in Fe‐doped GaN layers grown by low pressure metalorganic vapour phase epitaxy
Author(s) -
Azize M.,
Leroux M.,
Laugt M.,
Gibart P.,
Bougrioua Z.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565341
Subject(s) - metalorganic vapour phase epitaxy , doping , epitaxy , sapphire , materials science , photoluminescence , dislocation , microstructure , optoelectronics , diffraction , optics , nanotechnology , composite material , laser , layer (electronics) , physics
In order to get semi‐insulating GaN layers with a low dislocation density on sapphire, two kinds of Fe doping were explored by low pressure metalorganic vapour phase epitaxy (LP‐MOVPE): the modulation doping (MD) and the continuous doping (CD). The high crystalline quality and the semi‐insulating character are obtained in the case of the Fe‐MD layers. The effect of Fe doping on the strain was investigated in both kind of layers (MD and CD) by X‐ray diffraction, photoluminescence and reflectivity. The lattice parameters are functions of the iron doping level, whatever the doping mode. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)