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Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals
Author(s) -
Marona L.,
Riemann T.,
Christen J.,
Świetlik T.,
Franssen G.,
Wiśniewski P.,
Leszczyński M.,
Prystawko P.,
Grzegory I.,
Suski T.,
Porowski S.,
Czernecki R.,
Perlin P.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565316
Subject(s) - materials science , optoelectronics , diode , degradation (telecommunications) , dislocation , laser , diffusion , electronic engineering , optics , composite material , physics , engineering , thermodynamics
In this work we present a reliability study of low dislocation density InGaN laser diodes fabricated on high‐pressure grown GaN monocrystaline substrates. The aging process was performed under pulse current conditions. Degradation of these devices manifests primarily in the increase of the threshold current. Interestingly, the differential efficiency of lasers remains stable at all times. The aging time dependence of the increase of the threshold current precisely follows a square root dependence. These observations suggest that the degradation results from the enhancement of the nonradiative recombination within the device active layers and is related to point defect diffusion. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)