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Comparison of degradation mechanisms of blue‐violet laser diodes grown on SiC and GaN substrates
Author(s) -
Furitsch M.,
Avramescu A.,
Eichler C.,
Engl K.,
Leber A.,
Miler A.,
Rumbolz C.,
Brüderl G.,
Strauß U.,
Lell A.,
Härle V.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565310
Subject(s) - epitaxy , optoelectronics , materials science , substrate (aquarium) , diode , laser , dislocation , light emitting diode , blue laser , degradation (telecommunications) , optics , nanotechnology , layer (electronics) , electronic engineering , physics , composite material , geology , oceanography , engineering
In this work we present degradation studies of GaN based blue‐violet laser diodes grown on different substrates. By replacing the SiC substrate by GaN substrate, we change from hetero to homo epitaxy, while the threading dislocation density (TDD) is reduced by 3 orders of magnitude. A detailed analysis of small signal I – V curves shows an increase of non radiative (NR) recombination centers during aging for laser diodes on SiC substrate. This was not observed for lasers on GaN substrate due to the reduced TDD and therefore reduced number of diffusion channels for Mg‐atoms, acting as NR recombination centers in the active region. With an improved epitaxial structure on GaN substrate, we increased the lifetime of our lasers by a factor of 10. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)