Premium
A comparative study of near‐UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers
Author(s) -
Zhu D.,
Kappers M. J.,
Costa P. M. F. J.,
McAleese C.,
Rayment F. D. G.,
Chabrol G. R.,
Graham D. M.,
Dawson P.,
Thrush E. J.,
Mullins J. T.,
Humphreys C. J.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565250
Subject(s) - metalorganic vapour phase epitaxy , sapphire , indium , materials science , optoelectronics , photoluminescence , epitaxy , quantum well , transmission electron microscopy , diffraction , laser , optics , nanotechnology , physics , layer (electronics)
Abstract InGaN multiple quantum well (MQW) structures with AlGaN and AlInGaN barriers were grown on sapphire by metalorganic vapour phase epitaxy (MOVPE). The high resolution X‐ray diffraction (HRXRD) and transmission electron microscopy (TEM) characterisation results show substantial improvements in the material quality by introducing a small amount of indium into the AlGaN barriers, resulting in improved optical properties, as indicated by low‐temperature (6 K) photoluminescence (LT‐PL) spectroscopy. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)