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Buffer free MOCVD growth of GaN on 4H‐SiC: Effect of substrate treatments and UV‐photoirradiation
Author(s) -
Losurdo Maria,
Giangregorio Maria M.,
Bruno Giovanni,
Kim TongHo,
Choi Soojeong,
Brown April
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565154
Subject(s) - metalorganic vapour phase epitaxy , nucleation , chemical vapor deposition , substrate (aquarium) , irradiation , materials science , ellipsometry , buffer (optical fiber) , optoelectronics , photochemistry , chemistry , chemical engineering , analytical chemistry (journal) , thin film , nanotechnology , layer (electronics) , epitaxy , chromatography , organic chemistry , telecommunications , oceanography , physics , geology , computer science , nuclear physics , engineering
GaN has been grown directly on the Si‐face 4H‐SiC(0001) substrates using remote plasma‐assisted metalorganic chemical vapour deposition (RP‐MOCVD) with UV‐light irradiation. The effects of substrate pre‐treatments and UV‐photoirradiation of the growth surface on GaN nucleation and film morphology are investigated. Optical data from spectroscopic ellipsometry measurements and morphological data show an improvement in nucleation and material quality with UV‐light irradiation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)