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Characterization of free standing GaN grown by HVPE on a LiAlO 2 substrate
Author(s) -
Wang Lijun,
Zeimer U.,
Richter E.,
Hennig Ch.,
Herms M.,
Weyers M.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565136
Subject(s) - cathodoluminescence , substrate (aquarium) , luminescence , epitaxy , materials science , layer (electronics) , photoluminescence , hydride , optoelectronics , analytical chemistry (journal) , nanotechnology , chemistry , metallurgy , geology , oceanography , chromatography , metal
A 230 µm thick free standing GaN layer has been grown on a LiAlO 2 substrate by hydride vapor phase epitaxy, with the separation of the layer from the substrate occuring spontaneously during cooling down after growth. A strong green luminescence band is observed from the top surface, while from the bottom surface, strong blue and red bands are seen in photoluminescence (PL). The evolution of these luminescence bands with layer thickness was monitored by cross‐sectional cathodoluminescence (CL). PL and CL measurements indicate that the defect structure changes with growing layer thickness. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)