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Profiling of light emission of GaN‐based laser diodes with cathodoluminescence
Author(s) -
Godlewski M.,
Phillips M. R.,
Kazlauskas K.,
Czernecki R.,
Targowski G.,
Perlin P.,
Leszczyński M.,
Figge S.,
Hommel D.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565134
Subject(s) - cathodoluminescence , optoelectronics , materials science , laser , diode , laser diode , light emitting diode , optics , luminescence , physics
Cathodoluminescence is applied for evaluation of in‐plane variations of light emission from GaN‐based laser diode structures. We demonstrate that potential fluctuations affect significantly emission of laser diodes for e‐beam currents above thresholds for a stimulated emission. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)