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Si‐doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths
Author(s) -
Guillot F.,
Tchernycheva M.,
Nevou L.,
Doyennette L.,
Monroy E.,
Julien F. H.,
Dang Le Si,
Remmele T.,
Albrecht M.,
Shibata T.,
Tanaka M.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565129
Subject(s) - quantum dot , superlattice , optoelectronics , photodetector , materials science , doping , wavelength , infrared , optics , physics
We report on the controlled growth of Si doped GaN/AlN quantum dot (QD) superlattices, in order to tailor their intersubband absorption within the 1.3–1.5 µm telecommunication wavelengths. The QD size is tuned by modifying the amount of GaN in the QDs and the growth temperature. Silicon can be incorporated in the QDs to populate the first electronic level, without significant perturbation of the QD morphology. As a proof of the capability of these structures for infrared detection, a quantum‐dot intersubband photodetector at 1.38 µm with lateral carrier transport is demonstrated. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)