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Mg doping profile in III–N light emitting diodes in close proximity to the active region
Author(s) -
Köhler K.,
Perona A.,
Maier M.,
Wiegert J.,
Kunzer M.,
Wagner J.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565125
Subject(s) - electroluminescence , doping , diode , materials science , epitaxy , optoelectronics , quantum well , light emitting diode , diffusion , metal , active layer , vapor phase , analytical chemistry (journal) , chemistry , layer (electronics) , optics , nanotechnology , metallurgy , physics , laser , chromatography , thermodynamics , thin film transistor
Abstract We have investigated how in (AlGaIn)N quantum well (QW) light emitting diodes, grown by low‐pressure metal‐organic vapor phase epitaxy, the actual Mg doping profile close to the interface between AlGaN electron barrier and QW active region, known to be affected by both segregation of back diffusion of Mg, can be controlled and adjusted by the appropriate choice of growth parameters. Almost identical Mg doping profiles, and thus electroluminescence efficiencies which are strongly affected by the Mg doping profile, could be achieved for different combinations of Mg precursor flow and growth temperature. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)