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Fabrication of suspended GaN microstructures using GaN‐on‐patterned‐silicon (GPS) technique
Author(s) -
Yang Z.,
Wang R. N.,
Jia S.,
Wang D.,
Zhang B. S.,
Lau K. M.,
Chen K. J.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200565102
Subject(s) - materials science , etching (microfabrication) , gallium nitride , fabrication , substrate (aquarium) , silicon , optoelectronics , microstructure , silicon nitride , gallium , nanotechnology , isotropic etching , layer (electronics) , composite material , metallurgy , oceanography , medicine , alternative medicine , pathology , geology
We demonstrate a technique for fabricating suspended gallium nitride (GaN) microstructures without direct etching of GaN. The process combines a selective area growth of GaN‐on‐patterned‐silicon substrate (GPS) and a subsequent sacrificial wet etching of the silicon under the GaN structures. Both anisotropic and isotropic wet etching techniques are used to carry out the sacrificial etching. The pattern‐dependent lateral growth property of GaN growth is also discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)