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Pressure‐induced transformations of nitrogen implanted into silicon
Author(s) -
Akhmetov V. D.,
Misiuk A.,
Barcz A.,
Richter H.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200564511
Subject(s) - nitrogen , analytical chemistry (journal) , silicon , silicon nitride , silicon oxynitride , annealing (glass) , hydrostatic pressure , oxygen , materials science , infrared spectroscopy , ion implantation , chemistry , ion , metallurgy , physics , organic chemistry , chromatography , thermodynamics
Czochralski (CZ) Si samples implanted with nitrogen, with doses 10 17 ion/cm 2 and 10 18 ion/cm 2 , at 140 keV, were studied by means of Fourier transform infrared spectroscopy after annealing at 1130 °C/5 h under different hydrostatic pressures, from 1 bar to 10.7 kbar. It has been found for each pressure applied, that the increased nitrogen dose leads to transformation of the broadband spectra to the fine structure ones, corresponding to crystalline silicon nitride. The spectral position of observed sharp peaks in the investigated pressure region is red shifted in comparison to that for the peaks of crystalline silicon oxynitride found recently by other investigators in nitrogen‐containing poly‐Si as well as in a residual melt of nitrogen‐doped CZ‐Si. The application of the pressure during annealing results in further red shift of the nitrogen‐related bands. The observed decrease of frequency of vibrational bands is explained in terms of the pressure induced lowered incorporation of oxygen into growing oxynitride phase. Secondary ion mass spectrometry data reveal the decrease of oxygen content in implanted layer with increasing pressure during annealing. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)