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Germanium effect on oxygen‐related defects in Czochralski silicon
Author(s) -
Yang Deren,
Chen Jiahe,
Li Hong,
Ma Xiangyang,
Tian Daxi,
Li Liben,
Que Duanlin
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200564507
Subject(s) - germanium , silicon , materials science , wafer , doping , impurity , oxygen , getter , nucleation , precipitation , metallurgy , optoelectronics , chemistry , physics , organic chemistry , meteorology
The behaviours of germanium doped in Czochralski (CZ) silicon have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about oxygen related defects in germanium‐doped CZ (GCZ) silicon is presented. The formation of oxygen precipitates during CZ silicon growth can be improved by germanium, and the oxygen precipitation during thermal cycles can be enhanced, so that the internal gettering (IG) ability of GCZ silicon wafers for metallic impurities is improved. Meanwhile, the morphology of oxygen precipitates can be changed in GCZ silicon. Thermal donors (TDs) can be suppressed by germanium doping as the result of the reaction between germanium and point defects, while new donors (NDs) can be strongly enhanced in GCZ silicon because of a process associated with the nucleation enhancement of oxygen precipitates with germanium doping. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)