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R&D activities of silicon‐based thin‐film solar cells in China
Author(s) -
Zhao Yuwen,
Geng Xinhua,
Wang Wenjing,
Li Xudong,
Xu Ying
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200564506
Subject(s) - microcrystalline silicon , microcrystalline , materials science , polycrystalline silicon , amorphous silicon , quantum dot solar cell , polymer solar cell , copper indium gallium selenide solar cells , plasma enhanced chemical vapor deposition , thin film solar cell , plasmonic solar cell , silicon , optoelectronics , monocrystalline silicon , amorphous solid , solar cell , nanotechnology , crystalline silicon , chemistry , thin film transistor , crystallography , layer (electronics)
The status and progress of R&D activities of silicon‐based thin‐film solar cells in China are described briefly in this paper, including amorphous Si solar cells and microcrystalline Si film solar cells based on PECVD technology and polycrystalline film solar cells based on RTCVD technology. Especially, the microcrystalline thin‐film solar cells and the tandem solar cells of amorphous Si with microcrystalline Si have made great progress. The polycrystalline film solar cells have made remarkable achievements as well. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)