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Polycrystalline silicon thin‐film solar cells on various substrates
Author(s) -
Wang Wenjing,
Xu Ying,
Shen Hui
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200564504
Subject(s) - materials science , silicon , polycrystalline silicon , thin film , crystallite , chemical vapor deposition , nanocrystalline silicon , layer (electronics) , recrystallization (geology) , grain size , crystalline silicon , chemical engineering , nanotechnology , optoelectronics , composite material , amorphous silicon , metallurgy , thin film transistor , engineering , biology , paleontology
Thin‐film polycrystalline silicon solar cells have been fabricated on various substrates, such as inactive P ++ mono‐crystalline silicon substrates, p ++ mono‐Si substrates covered by thermally oxidized SiO 2 and ceramic substrates by means of a rapid thermal chemical vapour deposition (RTCVD) technique. Zone melting recrystallization (ZMR) was applied in the process in order to enlarge the grain size of the deposited silicon thin film. The deposition conditions were studied. The scanning rate of the ZMR process was investigated. The best conversion efficiency of 15.12% (AM1.5G, 24.5 °C) has been achieved on inactive P ++ mono‐crystalline silicon substrates without cell surface texture and 10.21% (AM1.5, 24.5 °C) on p ++ c‐Si substrates covered by thermally oxidized SiO 2 with the cell area of 1.07 cm 2 . The polycrystalline silicon thin film was also deposited on Al 2 O 3 substrates by a RTCVD process. A simple ZMR process was used without any intermediate layer and cap layers. The maximum grain size of the silicon thin film was about one millimeter in width and a few millimeters in length after ZMR. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)