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Effects of rapid thermal processing on oxide precipitation in conventional and nitrogen‐doped Czochralski silicon
Author(s) -
Ma Xiangyang,
Fu Liming,
Tian Daxi,
Cui Can,
Yang Deren
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200564501
Subject(s) - wafer , getter , silicon , materials science , rapid thermal processing , annealing (glass) , nucleation , oxide , precipitation , vacancy defect , doping , nitrogen , silicon oxide , optoelectronics , chemical engineering , metallurgy , chemistry , crystallography , physics , silicon nitride , organic chemistry , meteorology , engineering
In this paper, the effects of vacancies introduced by rapid thermal processing (RTP) on nucleation and growth of oxide precipitates in Czochralski (Cz) silicon are elucidated. Moreover, the nitrogen and vacancy enhancement roles in oxide precipitation are differentiated through designing specific annealing schemes. Furthermore, it is pointed out that the RTP‐based internal gettering process for a nitrogen‐doped Cz silicon wafer should be different from that for a conventional Cz silicon wafer in order to strengthen the intrinsic gettering capability. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)