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Fields of deformation anisotropy exploration in multilayered (In,Ga)As/GaAs structures by high‐resolution X‐ray scattering
Author(s) -
Yefanov O.,
Kladko V.,
Gudymenko O.,
Strelchuk V.,
Mazur Yu.,
Wang Zh.,
Salamo G.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200563525
Subject(s) - diffraction , anisotropy , scattering , superlattice , heterojunction , condensed matter physics , materials science , x ray crystallography , lattice (music) , optics , crystallography , physics , chemistry , acoustics
The results of investigation of In 0.3 Ga 0.7 As/GaAs superlattice by high‐resolution X‐ray scattering are presented. The influence of lattice distortion on diffraction curves (DC) were analyzed with dynamical diffraction theory. It allowed to explain azimuth dependence of experimental diffraction curves. Anisotropic changes in the shape of InGaAs lattice unit cell were shown and measured. The influence of smooth borders between hetero‐layers were analyzed. Comparative analysis of different gradient functions on the hetero‐border influence on diffraction curves was done. Parameters of heterojunction in investigated samples were determined with the help of DC modelling. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)