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Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers
Author(s) -
Ruterana P.,
Abouzaid M.,
Gloux F.,
Maciej W.,
Doualan J. L.,
Drago M.,
Schmidtling T.,
Pohl U. W.,
Richter W.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200563518
Subject(s) - metalorganic vapour phase epitaxy , sapphire , materials science , optoelectronics , microstructure , polar , semiconductor , high resolution , lattice (music) , band gap , epitaxy , layer (electronics) , nanotechnology , optics , laser , composite material , physics , remote sensing , astronomy , geology , acoustics
In this work we investigate the microstructure of InN layers grown by MOCVD on different buffer layers using TEM (InN, GaN). The large mismatch between the various lattices (InN, sapphire or GaN) leads to particular interface structures. Our local analysis allows to show that at atomic scale, the material has the InN lattice parameters and that no metallic In precipitates are present, meaning that the PL emission below 0.8 eV is a genuine property of the InN semiconductor. It is also shown that the N polar layers, which exhibit a 2D growth, have poorer PL emission than In polar layers. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)