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InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy
Author(s) -
Iliopoulos E.,
Georgakilas A.,
Dimakis E.,
Adikimenakis A.,
Tsagaraki K.,
Androulidaki M.,
Pelekanos N. T.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200563509
Subject(s) - molecular beam epitaxy , indium , materials science , nucleation , gallium , epitaxy , analytical chemistry (journal) , gallium nitride , alloy , coalescence (physics) , nitride , stoichiometry , diffraction , optoelectronics , crystallography , chemistry , metallurgy , nanotechnology , optics , physics , organic chemistry , layer (electronics) , chromatography , astrobiology
Indium gallium nitride alloy (0001) films in the entire composition range were grown heteroepitaxially by radio‐frequency plasma assisted molecular beam epitaxy on Ga‐polarity GaN(0001)/Al 2 O 3 substrates. A growth approach based on low substrate temperatures and near‐stoichiometric growth conditions was followed. Under these conditions incorporation efficiency of indium atoms was equal to one. X‐ray diffraction data reveal that phase separation phenomena were effectively suppressed. As the indium mole fraction increased, a tendency of the strain state of the films to change from compressive to tensile was observed. This was attributed to growth through nucleation and coalescence of three‐dimensional InGaN islands with high lattice mismatch on GaN(0001). (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)