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Stoichiometry effects and the Moss–Burstein effect for InN
Author(s) -
Butcher K. S. A.,
Hirshy H.,
Perks R. M.,
WintrebertFouquet M.,
Chen P. PT.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200563504
Subject(s) - stoichiometry , moss , band gap , absorption edge , materials science , enhanced data rates for gsm evolution , condensed matter physics , absorption (acoustics) , analytical chemistry (journal) , chemistry , optoelectronics , physics , telecommunications , environmental chemistry , computer science , biology , composite material , botany , organic chemistry
We examine the Moss–Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the Moss–Burstein effect is less than 0.72 eV for a high carrier concentration sample with a 1.88 eV absorption edge. Early results are also provided for high band‐gap low carrier concentration InN films that can be grown reprodcibly, vindicating the work of early groups in the field. The role of stoichiometry is examined in relation to point defects that appear to be common to many forms of InN. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)