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Electron band structure and optical properties of InN and related alloys
Author(s) -
Alexandrov D.,
Butcher S.,
Tansley T.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200563501
Subject(s) - exciton , electron , semiconductor , band gap , chemistry , atomic physics , condensed matter physics , physics , materials science , quantum mechanics
New metric system called electron metric system having basic metric constant is introduced. The connection between the electron metric system and the external metric system is defined. The symmetry relationships of the multinary semiconductor compound alloys are defined according to the electron metric system. The basic metric constant is found on the basis of diatomic tetrahedral cell. The electron wave vector in the new system is found and the electron energy states are determined. It is shown correlation between them in the multinary crystal. LCAO electron band structures of In x Al 1– x N and of In x Ga 1– x N are presented. The phenomenon tunnel optical absorption is investigated in In x Al 1– x N, in In x Ga 1– x N, in InN containing oxygen and in non‐stoichiometric InN. It is found the optical absorption edges begin in energies 0.2–1.62 eV that are lower than the energy band gaps due to this phenomenon. Existence of excitons of the structure is shown in these semiconductors and it is found that the peaks of the PL spectra correspond to annihilation energies of these excitons that change in interval 0.5–1.01 eV. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)