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FMR investigations of half‐metallic ferromagnets
Author(s) -
Rameev B.,
Yildiz F.,
Kazan S.,
Aktas B.,
Gupta A.,
Tagirov L. R.,
Rata D.,
Buergler D.,
Gruenberg P.,
Schneider C. M.,
Kämmerer S.,
Reiss G.,
Hütten A.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200563103
Subject(s) - materials science , ferromagnetic resonance , thin film , ferromagnetism , magnetic anisotropy , magnetocrystalline anisotropy , sputter deposition , analytical chemistry (journal) , sputtering , condensed matter physics , magnetization , nanotechnology , magnetic field , chemistry , physics , quantum mechanics , chromatography
Thin films of various half‐metallic ferromagnets, such as chromium dioxide (CrO 2 ) and Heusler alloys (Co 2 Cr 0.6 Fe 0.4 Al, Co 2 MnSi) have been investigated by ferromagnetic resonance (FMR) technique. It is demonstrated that FMR is a very efficient method to study the nanoscale magnetic properties, in particular to probe the magnetic anisotropy and magnetic inhomogeneities of ferromagnetic thin films. Epitaxial CrO 2 thin films of various thicknesses (25–535 nm) have been deposited on TiO 2 (100) substrates by chemical vapor deposition process. It is shown that the magnetic behavior of the CrO 2 films results from a competition between the magnetocrystalline and strain anisotropies. For the ultrathin CrO 2 film (25 nm) the magnetic easy axis switches from the c ‐direction to the b ‐direction of the rutile structure. Thin‐film Co 2 Cr 0.6 Fe 0.4 Al samples (25 nm or 100 nm) have been grown by DC magnetron sputtering either on unbuffered SiO 2 (100) substrates or on the substrates capped by a 50 nm thick V buffer layer. The effects of the vanadium buffer layer and of the film thickness are revealed by FMR studies of the Co 2 Cr 0.6 Fe 0.4 Al samples. Well‐resolved multiple spin‐wave modes are observed in the unbuffered Co 2 Cr 0.6 Fe 0.4 Al sample with a thickness of 100 nm and the exchange stiffness constant has been estimated. Thin films of Co 2 MnSi (4–100 nm) have been grown by DC sputtering on silicon substrates on top of a 42 nm thick V seed layer and capped either by Al 2 O 3 or by Co and V layers. A set of the 80 nm thick films has been annealed at different temperatures in the range of 425–550 °C. FMR studies of the Co 2 MnSi samples shows that at the fixed annealing temperature (450 °C) the highest magnetization is observed in the sample with a thickness of 61 nm, while the thicker samples (100 nm) reveal not only a lower magnetization but greater magnetic inhomogeneity as well. An annealing treatment at T ≥ 450 °C is essential to obtain higher magnetization as well as uniform magnetic properties in the Co 2 MnSi films. Weak SWR modes have also been observed in the thick Heusler films. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)