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Exciton dark states in the recombination kinetics of InAs quantum dots
Author(s) -
Vinattieri Anna,
Zamfirescu Marian,
Gurioli Massimo,
Colocci Marcello,
Sanguinetti Stefano,
Noetzel Richard
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200562031
Subject(s) - thermalisation , exciton , quantum dot , recombination , photoluminescence , excited state , relaxation (psychology) , population , spectral line , spontaneous emission , physics , atomic physics , chemistry , molecular physics , optoelectronics , condensed matter physics , quantum mechanics , psychology , social psychology , laser , biochemistry , demography , sociology , gene
Abstract Time‐resolved photoluminescence experiments in high quality InAs/GaAs quantum dots clearly show the interplay between radiative recombination and thermalization processes. In particular from temperature dependent PL spectra, we prove that the carrier recombination dynamics is ruled by the thermal population in optically inactive exciton states, related to the population of the first excited hole levels. Moreover time‐resolved spectra do not show any relaxation bottleneck, indicating an efficient carrier capture and a fast energy relaxation of the photogenerated carriers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)