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Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots
Author(s) -
Taliercio T.,
Valvin P.,
Intartaglia R.,
Sallet V.,
Harmand J. C.,
Guillet T.,
Lefebvre P.,
Bretag T.,
Gil B.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200562030
Subject(s) - quantum dot , photoluminescence , spectroscopy , condensed matter physics , population , perturbation (astronomy) , physics , materials science , optoelectronics , quantum mechanics , demography , sociology
We present a study of the optical properties of quantum dots based on a new family of semiconductors: III–V dilute nitrides such as (In,Ga)(N,As). Continuous wave and time resolved photoluminescence (PL) experiments allowed us to evaluate the impact of N incorporation during the growth of InAs/GaAs quantum dots. Previous work [V. Sallet et al., to be submitted to J. Cryst. Growth (2005); O. Schumann et al., J. Appl. Phys. 96 , 2832 (2004)] showed that increasing the flux of N atoms into the growth chamber modifies drastically the size of the dots which leads to a bimodal growth. Two populations of dots with different sizes appear. The quantum dot PL line broadens and a second PL line appears at higher energy. Time resolved PL allows us to identify the nature of this second PL line: second population of quantum dots. A second decay time is observed which we interpret as being the consequence of the perturbation of the electronic states of the quantum dots. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)