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Roles for aluminium indium nitride insertion layers in fabrication of GaN‐based microcavities
Author(s) -
Bejtka K.,
Rizzi F.,
Edwards P. R.,
Martin R. W.,
Gu E.,
Dawson M. D.,
Watson I. M.,
Sellers I. R.,
Semond F.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200562021
Subject(s) - materials science , cathodoluminescence , indium , optoelectronics , indium nitride , fabrication , nitride , aluminium nitride , quantum well , aluminium , etching (microfabrication) , luminescence , layer (electronics) , nanotechnology , optics , laser , composite material , medicine , alternative medicine , physics , pathology
AlInN alloys achieve an in‐plane lattice match to hexagonal GaN at an indium nitride mole fraction of ∼18%. Meanwhile Al 0.82 In 0.18 N displays a refractive index contrast of ∼7% with GaN at visible wavelengths. We illustrate the use of Al 0.82 In 0.18 N insertion layers to control layer thicknesses during homoepitaxial growth of GaN‐based microcavities, using in situ optical reflectometry. The structures discussed are 3 λ /2 microcavities incorporating distributed InGaN quantum wells tailored for emission at ∼400 nm. As‐grown samples have been characterised by techniques including cathodoluminescence spectroscopy. In addition to their role in growth monitoring, there are several post‐growth processing steps in which Al 0.82 In 0.18 N insertion layers can assist microcavity fabrication. We focus here on a demonstration of the ∼1:5 etch rate selectivity obtainable between Al 0.82 In 0.18 N and GaN in reactive ion etching. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)