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Growth and characterization of near‐atomically flat, thick homoepitaxial CVD diamond films
Author(s) -
Bogdan G.,
Nesládek M.,
D'Haen J.,
Maes J.,
Moshchalkov V. V.,
Haenen K.,
D'Olieslaeger M.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200561930
Subject(s) - hillock , diamond , raman spectroscopy , materials science , chemical vapor deposition , crystallite , substrate (aquarium) , analytical chemistry (journal) , methane , etching (microfabrication) , carbon film , surface finish , volumetric flow rate , chemical engineering , nanotechnology , composite material , thin film , chemistry , optics , metallurgy , layer (electronics) , oceanography , physics , organic chemistry , chromatography , quantum mechanics , geology , engineering
Abstract Diamond films were grown in an ASTeX MW PE CVD reactor. The effect of pre‐growth etching with a O 2 /H 2 plasma and the influence of the methane concentration on growth on type Ib (100) HPHT synthetic diamonds were investigated. By controlling step flow growth we were able to prepare optical quality thick diamond films, free of hillocks and unepitaxial crystallites, with a relatively high growth rate of 4 to 5 µm/h using higher pressures and methane concentrations than standard growth conditions in combination with a modified substrate holder. All diamond films were characterized by optical microscopy, SEM, AFM and Raman spectroscopy. The mean roughness (Rms) of the films grown with a thickness of 120 µm was approximately 0.5 to 0.8 nm for scanning regions of 5 × 5 µm 2 . For the first time nearatomically flat films thicker than 200 µm could be prepared. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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