Premium
Improvement of the electrical properties of compensated phosphorus‐doped diamond by high temperature annealing
Author(s) -
Chevallier J.,
Saguy C.,
Barbé M.,
Jomard F.,
Ballutaud D.,
Kociniewski T.,
Philosoph B.,
Fizgeer B.,
Koizumi S.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200561926
Subject(s) - annealing (glass) , doping , diamond , analytical chemistry (journal) , epitaxy , infrared , phosphorus , materials science , trapping , chemistry , optoelectronics , nanotechnology , metallurgy , optics , environmental chemistry , ecology , physics , layer (electronics) , biology
We have followed the evolution of the electrical and infrared absorption properties of two phosphorus‐doped epitaxial layers under a series of isochronal annealings between 800 °C and 1400 °C. In the as‐grown state, one sample is weakly compensated ( N a / N d = 0.15) while the other one is highly compensated ( N a / N d = 0.73). Under thermal annealing, both the electrical and infrared properties of the weakly compensated remain unchanged. On the contrary, the highly compensated sample becomes weakly compensated ( N a / N d = 0.15) after annealing at 1000 °C, 30 min while the neutral phosphorus concentration remains constant. This result is explained in terms of a migration of negatively charged acceptors followed by trapping on P + donors. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom