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Growth and characterization of phosphorus‐doped diamond using organophosphorus gases
Author(s) -
Kato Hiromitsu,
Yamasaki Satoshi,
Okushi Hideyo
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200561925
Subject(s) - diamond , chemical vapor deposition , cathodoluminescence , doping , phosphorus , chemistry , inorganic chemistry , analytical chemistry (journal) , materials science , chemical engineering , environmental chemistry , organic chemistry , luminescence , optoelectronics , engineering
Phosphorus‐doped diamond films were grown by plasma‐enhanced chemical vapor deposition using organophosphorus gases, tertiarybutylphosphine (TBP) and trimethylphosphine (TMP). The electronic properties are characterized based on secondary ion mass spectroscopy, Hall‐effect, and cathodoluminescence measurements and compared with data deduced for samples which have been doped using PH 3 . The technical potential of P‐doping using TBP is discussed and the high potential of TBP and TMP as alternative P precursors for P‐doping of diamond is shown. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)