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Silicon incorporation in CVD diamond layers
Author(s) -
Barjon J.,
Rzepka E.,
Jomard F.,
Laroche J.M.,
Ballutaud D.,
Kociniewski T.,
Chevallier J.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200561920
Subject(s) - silicon , diamond , materials science , substrate (aquarium) , layer (electronics) , polycrystalline silicon , nucleation , chemical vapor deposition , nanocrystalline silicon , etching (microfabrication) , wafer , optoelectronics , nanotechnology , crystalline silicon , composite material , chemistry , amorphous silicon , thin film transistor , oceanography , organic chemistry , geology
The silicon incorporation in diamond is an important issue as silicon is widely used as a substrate for the growth of polycrystalline thin films. Incorporated silicon impurities are suspected to come from the hydrogen etching of the silicon substrate. To clearly establish this point we introduced a solid source of silicon during the growth of a homoepitaxial diamond layer on a HPHT diamond substrate. A quantitative SIMS analysis revealed concentrations of silicon up to 3 × 10 19 cm –3 in the diamond layer. Then we propose a scenario for the contamination of polycrystalline diamond grown on silicon substrates: after nucleation, the progressive paving of the silicon surface by 3D grains causes a fast decrease of its incorporation. At coalescence, the silicon substrate is completely covered by a 2D diamond film and the silicon concentration in diamond reaches a residual level. The investigated MPCVD and HFCVD diamond layers grown on silicon substrates present comparable features. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)