Ultra‐low energy SIMS study of ultra‐shallow boron implants in HPHT diamond | Zendy

Guzmán de la Mata B. | Zendy; Dowsett M. G. | Zendy; Palitsin V. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Ultra‐low energy SIMS study of ultra‐shallow boron implants in HPHT diamond

Author(s) -

Guzmán de la Mata B.,

Dowsett M. G.,

Palitsin V.

Publication year - 2005

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200561905

Subject(s) - boron , diamond , trim , materials science , low energy , recoil , analytical chemistry (journal) , atomic physics , chemistry , metallurgy , physics , organic chemistry , chromatography , computer science , operating system

The primary beam energy and species (Cs + , Ar + ) dependence of ultra low energy SIMS depth profiles of ultra‐shallow boron implants into CVD grown diamond is investigated in this paper. The data are compared with TRIM simulation of the 5 keV 11 B + implant. Cs + profiles (1 keV, 30°) appear to be seriously distorted by atomic mixing and recoil implantation due to the high mass of the probe. Ar + profiles (300 eV–1 keV, 0°) are less distorted, but both Cs + and Ar + tend to produce significant tails. The Ar + SIMS profiles produce implants which appear to be shallower than the TRIM simulation. We show that profiling using Ar + with energies between 0.3 and 1 keV can be used to extrapolate a profile to zero beam energy. The extrapolated data indicate a centroid between 5 and 10 nm from the surface, whereas TRIM predicts 11 nm. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research