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Threading dislocation density reduction in two‐stage growth of GaN layers
Author(s) -
Bougrov V. E.,
Odnoblyudov M. A.,
Romanov A. E.,
Lang T.,
Konstantinov O. V.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521528
Subject(s) - dislocation , materials science , flattening , stage (stratigraphy) , threading (protein sequence) , layer (electronics) , reduction (mathematics) , crystallography , optoelectronics , composite material , chemistry , geometry , mathematics , paleontology , biochemistry , protein structure , biology
A theoretical approach is proposed to reduce the density of threading dislocations (TDs) in (0001) oriented growth of GaN layers. The approach can be realized by repeated stages of growth surface roughening (stage I) and flattening (stage II). Fundamentals of the approach include the formation of a dislocation redirection layer with inclined TDs at stage I and enhanced reactivity among inclined TDs in a dislocation reaction layer at stage II. A reaction‐kinetics model is applied for the quantitative prediction of TD density reduction which can be achieved as a result of the two‐stage growth technique. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)