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Mg‐doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition
Author(s) -
Yu Hongbo,
Strupinski Wlodek,
Butun Serkan,
Ozbay Ekmel
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521461
Subject(s) - ohmic contact , electrical resistivity and conductivity , sapphire , chemical vapor deposition , materials science , metalorganic vapour phase epitaxy , analytical chemistry (journal) , doping , alloy , conductivity , epitaxy , metallurgy , nanotechnology , chemistry , optoelectronics , layer (electronics) , laser , optics , physics , chromatography , electrical engineering , engineering
The growth of high‐performance Mg‐doped p‐type Al x Ga 1– x N ( x = 0.35) layers using low‐pressure metalorganic chemical vapour deposition on an AlN/sapphire template is reported. The influence of growth conditions on the p‐type conductivity of the Al x Ga 1– x N ( x = 0.35) alloy was investigated. It was found that the p‐type resistivity of the AlGaN alloy demonstrates a marked dependence on the Mg concentration, V/III ratio and group III element flow rate. A minimum p‐type resistivity of 3.5 Ω cm for Al x Ga 1– x N ( x = 0.35) epilayers was achieved. A Ni/Au (10 nm/100 nm) ohmic contact was also fabricated and a specific contact resistivity of 8.1 × 10 –2 Ω cm 2 was measured. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)