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Study of Au nanoparticles/ITO ohmic contacts to p‐type GaN
Author(s) -
Chen LungChien,
Lu SengFong
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521442
Subject(s) - ohmic contact , contact resistance , materials science , nanoparticle , light emitting diode , electrode , optoelectronics , layer (electronics) , nanotechnology , chemistry
P‐type ohmic contact between Au nanoparticles/ITO and p‐GaN during heat treatment is reported. Optimal conditions are selected to minimize the lowest specific contact resistance to 1.66 × 10 –3 Ω cm 2 , as determined by the transmission line model (TLM) after heat treatment process at an alloying temperature of 600 °C for 10 min in air. Au nanoparticles/ITO bi‐layers are also applied to GaN‐based LEDs to form an electrode with a p‐type ohmic contact. Typical I–V characteristics of the GaN‐based LEDs with an ohmic contact layer of Au nanoparticles/ITO exhibit a forward‐bias voltage of 3.43 V at an injection current of 20 mA. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)