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Doping effects of a nano‐nitride layer at the interfaces of a NiO/Co/Cu/Co/Cu structure
Author(s) -
Zhao Z. C.,
Wang H.,
Xiao S. Q.,
Zhong X. X.,
Gu Y. Z.,
Xia Y. X.,
Jin Q. Y.,
Wu X. S.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521423
Subject(s) - non blocking i/o , doping , nano , materials science , layer (electronics) , nitride , magnetoresistance , spin (aerodynamics) , nanotechnology , chemistry , optoelectronics , composite material , magnetic field , physics , thermodynamics , biochemistry , quantum mechanics , catalysis
NiO/Co/Cu/Co/Cu spin valves with a doped nano‐nitride layer (NNL) at different interfaces have been investigated. The positions of the NNL have a significant influence on magnetoresistance (MR). When the NNL is doped at the top interface with the resulting structure of NiO/Co/Cu/Co/NNL/Cu, the MR is higher than that of the non‐doped structure, while MR becomes relatively small when the NNL is doped at the bottom interface between NiO and Co. A detailed analysis is given. This study might be considered as useful for furthering understanding of how to tailor MR with NNLs. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)