Doping effects of a nano‐nitride layer at the interfaces of a NiO/Co/Cu/Co/Cu structure | Zendy

Zhao Z. C. | Zendy; Wang H. | Zendy; Xiao S. Q. | Zendy; Zhong X. X. | Zendy; Gu Y. Z. | Zendy; Xia Y. X. | Zendy; Jin Q. Y. | Zendy; Wu X. S. | Zendy

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Doping effects of a nano‐nitride layer at the interfaces of a NiO/Co/Cu/Co/Cu structure

Author(s) -

Zhao Z. C.,

Wang H.,

Xiao S. Q.,

Zhong X. X.,

Gu Y. Z.,

Xia Y. X.,

Jin Q. Y.,

Wu X. S.

Publication year - 2006

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200521423

Subject(s) - non blocking i/o , doping , nano , materials science , layer (electronics) , nitride , magnetoresistance , spin (aerodynamics) , nanotechnology , chemistry , optoelectronics , composite material , magnetic field , physics , thermodynamics , biochemistry , quantum mechanics , catalysis

NiO/Co/Cu/Co/Cu spin valves with a doped nano‐nitride layer (NNL) at different interfaces have been investigated. The positions of the NNL have a significant influence on magnetoresistance (MR). When the NNL is doped at the top interface with the resulting structure of NiO/Co/Cu/Co/NNL/Cu, the MR is higher than that of the non‐doped structure, while MR becomes relatively small when the NNL is doped at the bottom interface between NiO and Co. A detailed analysis is given. This study might be considered as useful for furthering understanding of how to tailor MR with NNLs. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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