Direct evidence of self‐aligned Si nanocrystals formed by ion irradiation of Si/SiO 2  interfaces | Zendy

Röntzsch Lars | Zendy; Heinig KarlHeinz | Zendy; Schmidt Bernd | Zendy; Mücklich Arndt | Zendy; Möller Wolfhard | Zendy; Thomas Jürgen | Zendy; Gemming Thomas | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Direct evidence of self‐aligned Si nanocrystals formed by ion irradiation of Si/SiO 2 interfaces

Author(s) -

Röntzsch Lars,

Heinig KarlHeinz,

Schmidt Bernd,

Mücklich Arndt,

Möller Wolfhard,

Thomas Jürgen,

Gemming Thomas

Publication year - 2005

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200521399

Subject(s) - annealing (glass) , nanocrystal , transmission electron microscopy , irradiation , materials science , ion , dispersity , oxide , silicon , nanotechnology , chemical engineering , analytical chemistry (journal) , crystallography , optoelectronics , chemistry , composite material , metallurgy , physics , organic chemistry , nuclear physics , polymer chemistry , engineering , chromatography

Energy‐filtered transmission electron microscopy proves directly that ion irradiation and post‐irradiation annealing of a Si/SiO 2 interface results in the formation of a narrow layer of monodisperse Si nanocrystals in the oxide at a tunnel distance from the interface. Position and size of the Si nanocrystals are in agreement with predictive atomistic computer simulations. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research