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Direct evidence of self‐aligned Si nanocrystals formed by ion irradiation of Si/SiO 2 interfaces
Author(s) -
Röntzsch Lars,
Heinig KarlHeinz,
Schmidt Bernd,
Mücklich Arndt,
Möller Wolfhard,
Thomas Jürgen,
Gemming Thomas
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521399
Subject(s) - annealing (glass) , nanocrystal , transmission electron microscopy , irradiation , materials science , ion , dispersity , oxide , silicon , nanotechnology , chemical engineering , analytical chemistry (journal) , crystallography , optoelectronics , chemistry , composite material , metallurgy , physics , organic chemistry , nuclear physics , polymer chemistry , engineering , chromatography
Energy‐filtered transmission electron microscopy proves directly that ion irradiation and post‐irradiation annealing of a Si/SiO 2 interface results in the formation of a narrow layer of monodisperse Si nanocrystals in the oxide at a tunnel distance from the interface. Position and size of the Si nanocrystals are in agreement with predictive atomistic computer simulations. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)