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Phase transformation of Si upon epitaxial CVD growths of β‐SiC layer on Si substrates
Author(s) -
Zhu W. L.,
Zhu J. L.,
Wan K. S.,
Nishino S.,
Pezzotti G.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521396
Subject(s) - epitaxy , silicon , materials science , stress relaxation , raman spectroscopy , phase (matter) , layer (electronics) , relaxation (psychology) , stress (linguistics) , transformation (genetics) , crystallography , optoelectronics , chemical engineering , chemistry , nanotechnology , composite material , optics , organic chemistry , psychology , social psychology , linguistics , creep , physics , philosophy , biochemistry , gene , engineering
Micro‐Raman spectroscopy was applied to investigate the stress relaxation in the CVD growth of SiC on silicon substrates. We observed a double‐peak feature of the LO + 2TO silicon phonon in as‐grown SiC/Si samples, and tentatively ascribed it to phase transformation of silicon during the epitaxial growth. Stress analysis around the featured regions suggested that it might be related with incomplete relief of local stress, such as appearance of micropipes in suitable circumstances. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)